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| APM4350KP N-Channel Enhancement Mode MOSFET Features * 30V/60A, RDS(ON) =7.5m (typ.) @ VGS = 10V RDS(ON) =11.5m (typ.) @ VGS = 4.5V Pin Description D D D D S S S G * * * * Super High Dense Cell Design Avalanche Rated Reliable and Rugged Lead Free Available (RoHS Compliant) DD D D Applications * Power Management in Notebook Computer, or Decktop Computer. G SSS N-Channel MOSFET Ordering and Marking Information APM4350 Lead Free Code Handling Code Temp. Range Package Code Package Code KP : KPAK Operating Junction Temp. Range C : -55 to 150 C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM4350 KP : APM4350 XXXXX Note: ANPEC lead-free products contain molding compounds 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright (c) ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 1 www.anpec.com.tw APM4350KP Absolute Maximum Ratings Symbol VDSS VGSS TJ TSTG IS IDP (TA = 25C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current 300s Pulse Drain Current Tested TC=25C TC=25C TC=100C Rating 30 20 150 -55 to 150 50 140 80 60 35 50 20 2.5 Unit Common Ratings (TA=25C Unless Otherwise Noted) V C C A A Mounted on Large Heat Sink ID PD RJC Continuous Drain Current TC=25C TC=100C Maximum Power Dissipation Thermal Resistance-Junction to Case 2 A TC=25C TC=100C W C/W Mounted on PCB of 1in pad area ID PD RJA Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25C TA=100C TA=25C TA=100C 13.5 8.5 2.5 1 50 10 6 1.5 0.5 75 W C/W W C/W A Mounted on PCB of Minimum Footprint ID PD RJA Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25C TA=100C TA=25C TA=100C A Copyright (c) ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 2 www.anpec.com.tw APM4350KP Electrical Characteristics Symbol Parameter (TA = 25C Unless Otherwise Noted) Test Condition APM4350KP Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) a VGS=0V, IDS=250A VDS=24V, VGS=0V Tj=85C VDS=VGS, IDS=250A VGS=20V, VDS=0V VGS=10V, IDS=30A VGS=4.5V, IDS=15A ISD=15A, VGS=0V IDS=15A, dlSD/dt=100A/s 30 1 30 1.3 1.8 7.5 11.5 2.5 100 9 14.5 V A V nA m Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Characteristics VSD trr Qrr a Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge b 0.75 11 3 1.1 V ns nC Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Drain Charge b 28 VDS=15V, VGS=10V, IDS=30A 4 9 39 nC Gate-Source Charge Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf NoteG VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz 1.6 1660 260 170 18 33 28 86 41 15 47 22 pF Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time VDD=15V, RL=15, IDS=1A, VGEN=10V, RG=6 ns a : Pulse test ; pulse width300s, duty cycle2%. b : Guaranteed by design, not subject to production testing. Copyright (c) ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 3 www.anpec.com.tw APM4350KP Typical Characteristics Power Dissipation 60 Drain Current 70 60 50 Ptot - Power (W) 40 ID - Drain Current (A) 50 40 30 20 10 30 20 10 TC=25 C 0 20 40 60 80 100 120 140 160 o 0 0 TC=25 C,VG=10V 0 20 40 60 80 100 120 140 160 o Tj - Junction Temperature (C) Tj - Junction Temperature (C) Safe Operation Area Normalized Transient Thermal Resistance 400 2 1 Thermal Transient Impedance 100 ID - Drain Current (A) it im )L on s( Rd Duty = 0.5 0.2 0.1 0.05 1ms 10ms 100ms 1s DC 10 0.1 0.02 0.01 1 0.1 0.1 TC=25 C 1 10 80 o Single Pulse 0.01 1E-4 1E-3 0.01 0.1 Mounted on 1in pad o RJA :50 C/W 2 1 10 100 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright (c) ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 4 www.anpec.com.tw APM4350KP Typical Characteristics (Cont.) Output Characteristics 120 VGS= 6,7,8,9,10V 5.5V 100 4.5V 5V Drain-Source On Resistance 20 18 RDS(ON) - On - Resistance (m) 16 14 12 10 8 6 4 VGS=4.5V ID - Drain Current (A) 80 60 4V 40 3.5V 20 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS=10V 2 0 20 40 60 80 100 120 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate-Source On Resistance 18 ID=30A 16 Gate Threshold Voltage 1.8 1.6 IDS =250A RDS(ON) - On - Resistance (m) Normalized Threshold Voltage 1.4 1.2 1.0 0.8 0.6 0.4 0.2 14 12 10 8 6 4 1 2 3 4 5 6 7 8 9 10 0.0 -50 -25 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (C) Copyright (c) ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 5 www.anpec.com.tw APM4350KP Typical Characteristics (Cont.) Drain-Source On Resistance 1.8 1.6 VGS = 10V IDS = 30A Source-Drain Diode Forward 100 Normalized On Resistance 1.4 IS - Source Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 RON@Tj=25 C: 7.5m 0 25 50 75 100 125 150 o 10 Tj=150 C Tj=25 C o o 1 0.2 0.0 0.3 0.6 0.9 1.2 1.5 1.8 Tj - Junction Temperature (C) VSD - Source - Drain Voltage (V) Capacitance 2500 Frequency=1MHz 10 VDS= 15V IDS= 30A Gate Charge 2000 VGS - Gate - source Voltage (V) 8 C - Capacitance (pF) Ciss 1500 6 1000 4 500 Coss Crss 0 0 5 10 15 20 25 30 2 0 0 5 10 15 20 25 30 VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright (c) ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 6 www.anpec.com.tw APM4350KP Avalanche Test Circuit and Waveforms VDS L DUT RG VDD IL 0.01 tp Switching Time Test Circuit and Waveforms VDS RD VDS DUT VGS RG VDD 10% tp 90% VGS td(on) tr td(off) tf Copyright (c) ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 7 www.anpec.com.tw APM4350KP Packaging Information KPAP (Reference JEDEC Registration MS-012) 8 8 7 6 5 F F1 E1 E 1 2 3 4 1 G 2 3 4 G1 D a 7 6 5 Dim A B C D E E1 e F F1 G G1 H K a Millimeters Min. Max. 1.00 1.20 0.38 0.51 0.19 0.25 4.80 5.00 5.90 6.10 5.696 5.796 1.27 BSC 0.052 0.152 0.352 0.452 0.052 0.152 0.352 0.452 3.491 3.691 1.60 0 12 C e B A K Inches Min. Max. 0.039 0.047 0.015 0.020 0.007 0.010 0.189 0.197 0.232 0.240 0.224 0.228 0.050 BSC 0.002 0.006 0.014 0.018 0.002 0.006 0.014 0.018 0.137 0.145 0.063 0 12 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb,100%Sn). Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. 8 www.anpec.com.tw Copyright (c) ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 H APM4350KP Reflow Condition (IR/Convection or VPR Reflow) TP Ramp-up tp Critical Zone TL to TP Temperature TL Tsmax tL Tsmin Ramp-down ts Preheat 25 t 25X to Peak C Time Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Time 25C to Peak Temperature Sn-Pb Eutectic Assembly Large Body Small Body 3C/second max. 100C 150C 60-120 seconds Pb-Free Assembly Large Body Small Body 3C/second max. 150C 200C 60-180 seconds 3C/second max 183C 60-150 seconds 225 +0/-5C 10-30 seconds 240 +0/-5C 10-30 seconds 217C 60-150 seconds 245 +0/-5C 10-30 seconds 250 +0/-5C 20-40 seconds 6C/second max. 6 minutes max. 6C/second max. 8 minutes max. Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright (c) ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 9 www.anpec.com.tw APM4350KP Package Refolw Conditions pkg. thickness 2.5mm and all bags Convection 220 +5/-0X C VPR 215-219X C IR/Convection 220 +5/-0X C pkg. thickness < 2.5mm and 3 pkg. volume 350mm pkg. thickness < 2.5mm and pkg. 3 volume < 350mm Convection 235 +5/-0X C VPR 235 +5/-0X C IR/Convection 220 +5/-0X C Reliability test program Test Item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko T2 J C A B T1 Copyright (c) ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 10 www.anpec.com.tw APM4350KP Carrier Tape & Reel Dimensions(Cont.) Application A 3301 SOP- 8 F 5.51 B 62+1.5 D C 12.75+ 0.15 D1 J 20.5 Po 4.00.1 T1 12.40.2 P1 2.00.1 T2 20.2 Ao 6.40.1 W 120. 3 Bo 5.20. 1 P 80.1 Ko E 1.750.1 t 1.55+0.1 1.55+0.25 2.10.1 0.30.013 Cover Tape Dimensions Application SOP-8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright (c) ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 11 www.anpec.com.tw |
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